Pinned photodiode integrated with trench isolation and fabrication method

ABSTRACT

A photo sensor with pinned photodiode structure integrated with a trench isolation structure. The photo sensor includes a substrate of a first conductivity type, at least one trench in the substrate, at least one doped region of the first conductivity type, and at least one doped region of a second conductivity type. Each doped region of the first conductivity type is beneath a corresponding trench. Each doped region of the second conductivity type is sandwiched between the corresponding doped region and the substrate of the first conductivity type. No edge of any doped region of the first or second conductivity type extends to the trench corners. A method of fabricating the photo sensor is also provided.

BACKGROUND

This application is a Divisional of co-pending application Ser. No.10/918,417, filed on Aug. 16, 2004, the entire contents of which arehereby incorporated by reference and for which priority is claimed under35 U.S.C. § 120.

The present invention relates in general to a photodiode structure, andmore particularly to a pinned photodiode integrated with a trenchisolation structure.

Recently, NPS (N-type photo sensor)/P-sub photodiodes formed under STI(shallow trench isolation) regions have been widely used due to theirlow dark current and high quantum efficiency. Conversely, pinnedphotodiode structures are used to improve dark current and blue(shortwavelength) response, by forming a buried junction near the surface ofthe substrate, in conventional image sensors.

As is well-known to those skilled in the art, the pinned photodiode(PPD) has been widely used as an element to produce and integratephotoelectric charge generated in image sensors when detecting lightfrom an object. These are also referred to as “buried photodiodes” asthey comprise a PNP (or NPN) junction structure buried in a substrate.When compared with photodiodes of other structures, the PPD has variousadvantages, among them is an increased depletion depth which produceshigh quantum efficiency during conversion of incident photons intoelectric charges. That is, in a PPD comprising a PNP junction structure,the N-type region is fully depleted and the depletion region extends toboth P-type regions with an increased depletion depth. Accordingly, thisvertical extension of the depletion depth may increase quantumefficiency, thereby enabling an excellent light sensitivity.

The pinned photodiode structure, however, is not compatible withconventional STI technology due to the difficulty of controlling theformation of a shallow source/drain junction and the inability to coverthe STI corner in the conventional process.

SUMMARY

An embodiment of the invention provides a pinned photodiode structureintegrated with a trench isolation structure. The pinned photodiodeprovides improved dark current and blue response.

An embodiment of the invention provides a photo sensor with a pinnedphotodiode structure integrated with a trench isolation structure. Thephoto sensor comprises a substrate of a first conductivity type, atleast one trench in the substrate, at least one doped region of thefirst conductivity type, and at least one doped region of a secondconductivity type. Each doped region of the first conductivity type isformed beneath the corresponding trench. Each doped region of the secondconductivity type is sandwiched between the corresponding doped regionand the substrate of the first conductivity type. No edge of any dopedregion of the first or second conductivity types extends to the trenchcorners.

Another embodiment of the invention provides a fabricating method of aphoto sensor with a pinned photodiode structure integrated with a trenchisolation structure. The fabricating method comprises forming asubstrate of a first conductivity type, forming at least one trench inthe substrate, forming at least one doped region of the firstconductivity type, and forming at least one doped region of a secondconductivity type. Each doped region of the first conductivity type isformed beneath the bottom of the corresponding trench. Each doped regionof the second conductivity type is sandwiched between the correspondingdoped region and the substrate of the first conductivity type. No edgeof any doped region of the first or second conductivity types extends tothe trench corners.

The pinned photodiode structure provided by embodiments of the inventionis integrated with a trench isolation structure. The pinned photodiodestructure is located away from the trench corners with high trap densityand dark current is thereby improved. Additionally, short wavelengthphoto response is also improved through use of the pinned photodiodestructure.

BRIEF DESCRIPTION OF THE DRAWINGS

The present invention will become more fully understood from thedetailed description given hereinbelow and the accompanying drawings,given by way of illustration only and thus not intended to be limitativeof the present invention.

FIG. 1 illustrates a photo sensor according to an embodiment of theinvention;

FIG. 2 illustrates a photo sensor according to another embodiment of theinvention; and

FIGS. 3A˜3E collectively illustrate the fabrication of a photo sensoraccording to one preferred embodiment of the present invention.

DETAILED DESCRIPTION

The construction of a photo sensor according to the embodiments of theinvention is described below. While the embodiments are directed to anNPN pinned photodiode structure, the embodiments also are applicable toa PNP pinned photodiode structure.

FIG. 1 illustrates a photo sensor according to an embodiment of thepresent invention. The photo sensor 100 comprises a P-type substrate110, with at least one trench 120 formed therein, at least one heavilydoped P-type region 122, and at least one lightly doped N-type region124. Each heavily doped P-type region 122 is located beneath thecorresponding trench 120 and contacts the corresponding trench 120. Eachlightly doped N-type region 124 is sandwiched between the correspondingheavily doped P-type region 122 and the P-type substrate 110. No edge ofany heavily doped P-type region 122 or lightly doped N-type region 124extends to the trench corner 126. More specifically, the distance 125from one edge of the doped region to the corresponding trench corner 126is in the range between 0.1 and 0.3 μm. Since even after thermalannealing, there are some dislocations around the trench corners 126.Overlap between the PNP pinned photodiode structure and the trenchcorners 126 is avoided to reduce dark current. Furthermore, as shown inFIG. 1, part of the heavily doped P-type region 122 is not overlapped bythe corresponding lightly doped N-type region 124. More specifically,the extension 127 from one edge of the lightly doped N-type region 124to the corresponding edge of the heavily doped P-type region 122 is inthe range between 0.1 and 0.3 μm. A P-well 128 is coupled to the heavilydoped P-type region 122, to provide a bias voltage thereto, via theextension 127. Conversely, an N-well 130 is coupled to the lightly dopedN-type region 124. The charges generated in the depletion region in thelightly doped N-type region 124 are collected by the N-well 130. Thecharges are then transferred to the source/drain region 133 of thetransfer transistor 134 via the heavily doped N-type region 131 and ametal interconnection 132.

FIG. 2 illustrates another embodiment of a photo sensor. The photosensor 200 comprises a P-type substrate 210, at least one trench 220 inthe P-type substrate 210 and at least one P+/N− junction. Each P+/N−junction is located beneath the corresponding trench 220. Each lightlydoped N-type region is sandwiched between the corresponding P-typeheavily doped region and the P-type substrate 210. No edge of anyheavily doped P-type region or lightly doped N-type region extends tothe trench corner 226. More specifically, the distance 225 from one edgeof the doped region to the corresponding trench corner 226 is in therange between 0.1 and 0.3 μm. As shown in FIG. 2, part of the heavilydoped P-type region 222 is not overlapped by the lightly doped N-typeregion 224. More specifically, the distance 227 from one edge of theN-type lightly doped region to the corresponding edge of the P-typelightly doped region is in the range between 0.1 and 0.3 μm. A P-well228 is coupled to the P-type heavily doped region, to provide a biasvoltage thereto, via the extension 227. Conversely, an N-well 230 iscoupled to the lightly doped N-type region. Any charge generated in thedepletion region in the lightly doped N-type region is collected by theN-well 230. The charge is then transferred to the source/drain region233 of the transfer transistor 234.

FIGS. 3A˜3E collectively illustrate an embodiment of fabrication of aphoto sensor. First, at least one trench 311, defined by a pad oxide 312and a pad nitride 314, is formed by dry etching a P-type substrate 300,as shown in FIG. 3A. A lining oxide 316 is preferably formed by dryoxidation to reduce surface damage to the trench 311. Subsequently, aphotolithography process and an ion implantation process are performed,as shown in FIG. 3B. A photoresist layer 317 masks the pad oxide/nitridelayer and all sidewalls of the trench 311. The trench corners 315 arealso covered by the photo resist layer 317. A lightly doped N-typeregion 318 is formed in the P-type substrate 300 by ion implantation320. Following the formation of the lightly doped N-type region 318,photolithography and ion implantation processes are again performed, asshown in FIG. 3C. The opening in the photoresist layer 323 is largerthan that of the photoresist layer 317. Another ion implantation processis performed to form a heavily doped P-type region 322 in the P-typesubstrate 300. In FIG. 3C, the lightly doped N-type region 318 issandwiched between the heavily doped P-type region 322 and the P-typesubstrate 300. Furthermore, no part of the P-type heavily doped region322 overlaps the lightly doped N-type region 318. Subsequent to theformation of the PNP pinned photodiode structure, an isolationdielectric is filled in the trench and etched back by a chemicalmechanical polishing (CMP) process. Thereafter, a P-well formationprocess compatible with a standard logic process is performed, as shownin FIG. 3D. The P-well 326 formed by a lithography and ion implantationprocess is coupled to the heavily doped P-type region 322 for providinga bias voltage thereto during operation. Similarly, following formationof the P-well 326, an N-well formation process compatible with astandard logic process is performed, as shown in FIG. 3E. The N-well 328formed by a lithography and ion implantation process is coupled to thelightly doped N-type region 318 for providing a bias voltage theretoduring operation. Finally, a standard logic process can be used to formtransistors to implement sensor circuits in an active pixel sensor.

The described embodiments provide a pinned photodiode structureintegrated with a trench isolation structure. The pinned photodiodestructure is located away from the trench corners with high trapdensity, thus dark current is improved. Additionally, short wavelengthphoto response is also improved through use of the pinned photodiodestructure.

While the invention has been described by way of example and in terms ofthe preferred embodiments, it is to be understood that the invention isnot limited to the disclosed embodiments. To the contrary, it isintended to cover various modifications and similar arrangements (aswould be apparent to those skilled in the art). Therefore, the scope ofthe appended claims should be accorded the broadest interpretation so asto encompass all such modifications and similar arrangements.

1. A method for fabricating a photo sensor, comprising: forming at leastone trench in a substrate of a first conductivity type; forming at leastone doped region of the first conductivity type underneath the bottom ofa corresponding trench; and forming at least one doped region of asecond conductivity type sandwiched between the corresponding dopedregion of the first conductivity type and the substrate; wherein bothedges of each doped region of the first and second conductivity typesare separated from the trench corners.
 2. The method as claimed in claim1, wherein the distance from either edge of each doped region of thefirst conductivity type and the second conductivity type to the trenchcorner is in the range of 0.1 to 0.3 μm.
 3. The method as claimed inclaim 1, wherein part of at least one of the doped regions of the firstconductivity type is not overlapped by the corresponding doped region ofthe second conductivity type.
 4. The method as claimed in claim 3,wherein the distance from any edge of the doped region of the firstconductivity type to a corresponding edge of the doped region of thesecond conductivity type is in the range of 0.1 to 0.3 μm.
 5. The methodas claimed in claim 1, further comprising forming a well of the firstconductivity type, the well of the first conductivity type coupled tothe doped region of the first conductivity type, and forming a well ofthe second conductivity type, the well of the second conductivity typecoupled to the doped region of the second conductivity type.
 6. Themethod as claimed in claim 5, further comprising forming a transfertransistor with source/drain regions of the second conductivity type. 7.The method as claimed in claim 6, wherein the well of the secondconductivity type is coupled to the source/drain regions of the transfertransistor.
 8. The method as claimed in claim 1, wherein the at leastone trench in the substrate of the first conductivity type is defined byat least one pad dielectric layer and is formed by dry etching thesubstrate of the first conductivity type.
 9. The method as claimed inclaim 1, further comprising forming a lining oxide on the surface of thetrench.